PREPARATION AND CHARACTERIZATION OF LEAD-ZIRCONATE-TITANATE THIN-FILMS BY DC REACTIVE COSPUTTERING
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | CHO, NH | ko |
| dc.contributor.author | Kim, Ho Gi | ko |
| dc.date.accessioned | 2013-02-27T21:16:43Z | - |
| dc.date.available | 2013-02-27T21:16:43Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995-01 | - |
| dc.identifier.citation | INTEGRATED FERROELECTRICS, v.6, no.1-4, pp.345 - 353 | - |
| dc.identifier.issn | 1058-4587 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/70881 | - |
| dc.description.abstract | Lead zirconate titanate(PZT) thin films have been grown on Pt/SiO2/Si substrate by DC reactive sputteing using multiple metal target. The experimental conditions to form the PZT phase on Pt substrate and electrical properties were systematically studied by changing the Zr content and substrate temperature: The film deposited at 600 degrees C had (001) preferred orientation and had high dielectric constant. The annealed film at 650 degrees C had high remanent polarization and high fatigue resistance to 10(9) cycles. | - |
| dc.language | English | - |
| dc.publisher | GORDON BREACH SCI PUBL LTD | - |
| dc.title | PREPARATION AND CHARACTERIZATION OF LEAD-ZIRCONATE-TITANATE THIN-FILMS BY DC REACTIVE COSPUTTERING | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1995QW49900031 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 6 | - |
| dc.citation.issue | 1-4 | - |
| dc.citation.beginningpage | 345 | - |
| dc.citation.endingpage | 353 | - |
| dc.citation.publicationname | INTEGRATED FERROELECTRICS | - |
| dc.identifier.doi | 10.1080/10584589508019378 | - |
| dc.contributor.localauthor | Kim, Ho Gi | - |
| dc.contributor.nonIdAuthor | CHO, NH | - |
| dc.type.journalArticle | Article; Proceedings Paper | - |
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