DC Field | Value | Language |
---|---|---|
dc.contributor.author | sangyeon han | ko |
dc.contributor.author | sun-a yang | ko |
dc.contributor.author | taekeun hwang | ko |
dc.contributor.author | jongho lee | ko |
dc.contributor.author | jong duk lee | ko |
dc.contributor.author | hyungcheol shin | ko |
dc.date.accessioned | 2013-02-27T19:47:10Z | - |
dc.date.available | 2013-02-27T19:47:10Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-05 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, v.39, no.5A, pp.2556 - 2559 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/70472 | - |
dc.description.abstract | We fabricated field-emission vacuum microelectronic devices such as diode and triode devices, using high-resolution electron-beam lithography in combination with the reactive ion etching (RIE) technique. The turn-on voltage of the diode is 13 V, which is the lowest value reported for single-crystalline lateral silicon field-emission devices. An emission current of 1.4 mu A was obtained at an anode bias of 40 V. Field emission was confirmed by the linearity of the Fowler-Nordheim plots. The anode current of the triode was effectively modulated as a function of gate voltage. The device stability results show that the proposed devices are stable and reproducible. | - |
dc.language | English | - |
dc.publisher | Japan Soc Applied Physics | - |
dc.subject | EMITTER | - |
dc.subject | FABRICATION | - |
dc.subject | TRIODE | - |
dc.title | Lateral Silicon Field-Emission Devices Using Electron Beam Lithography | - |
dc.type | Article | - |
dc.identifier.wosid | 000088909500015 | - |
dc.identifier.scopusid | 2-s2.0-0033704815 | - |
dc.type.rims | ART | - |
dc.citation.volume | 39 | - |
dc.citation.issue | 5A | - |
dc.citation.beginningpage | 2556 | - |
dc.citation.endingpage | 2559 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1 | - |
dc.contributor.localauthor | hyungcheol shin | - |
dc.contributor.nonIdAuthor | sangyeon han | - |
dc.contributor.nonIdAuthor | sun-a yang | - |
dc.contributor.nonIdAuthor | taekeun hwang | - |
dc.contributor.nonIdAuthor | jongho lee | - |
dc.contributor.nonIdAuthor | jong duk lee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | field-emission device | - |
dc.subject.keywordAuthor | E-beam lithography | - |
dc.subject.keywordAuthor | reactive ion etching | - |
dc.subject.keywordAuthor | silicon on insulator | - |
dc.subject.keywordAuthor | ultra high vacuum(UHV) | - |
dc.subject.keywordPlus | EMITTER | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | TRIODE | - |
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