DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Ho Gi | ko |
dc.date.accessioned | 2013-02-27T19:34:54Z | - |
dc.date.available | 2013-02-27T19:34:54Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-01 | - |
dc.identifier.citation | JOURNAL OF MATERIALS RESEARCH, v.12, no.4, pp.1160 - 1164 | - |
dc.identifier.issn | 0884-2914 | - |
dc.identifier.uri | http://hdl.handle.net/10203/70417 | - |
dc.description.abstract | The microstructure and electrical properties were investigated for SrTiO3(STO) thin films deposited on Pt/Ti/SiO2/Si substrates by PEMOCVD. The SrF2 phase existing in the STO films deposited at 450 degrees C influences the dielectric constant, dissipation factor, and leakage current density of STO films, The dielectric constant and dissipation factor of STO films deposited at 500 degrees C were 210 and 0.018 at 100 kHz, respectively, STO films were found to have paraelectric properties from the capacitance-voltage characteristics. Leakage current density of STO films at 500 degrees C was about 1.0 x 10(-8) A/cm(2) at an electric field of 70 kV/cm. The leakage current behaviors of STO films deposited at 500 and 550 degrees C were controlled by Schottky emission with applied electric field. | - |
dc.language | English | - |
dc.publisher | Cambridge Univ Press | - |
dc.subject | EPITAXIAL-GROWTH | - |
dc.title | Electrical and structural properties of SrTiO3 thin films deposited by plasma-enhangced metalorganic chemical vapor deposition | - |
dc.type | Article | - |
dc.identifier.wosid | A1997WR62200035 | - |
dc.identifier.scopusid | 2-s2.0-0031125508 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 1160 | - |
dc.citation.endingpage | 1164 | - |
dc.citation.publicationname | JOURNAL OF MATERIALS RESEARCH | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
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