DC Field | Value | Language |
---|---|---|
dc.contributor.author | min-hee cho | ko |
dc.contributor.author | youn-seon kang | ko |
dc.contributor.author | hae-yeol kim | ko |
dc.contributor.author | paul s. lee | ko |
dc.contributor.author | Lee, Jai Young | ko |
dc.date.accessioned | 2013-02-27T16:42:08Z | - |
dc.date.available | 2013-02-27T16:42:08Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000 | - |
dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.9, pp.3535 - 3540 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | http://hdl.handle.net/10203/69652 | - |
dc.description.abstract | Aluminum nitride (AlN) thin films have been deposited on silicon (100) wafers by radio frequency reactive magnetron sputtering. The as-deposited AIN films are less dense and have a higher dangling bonds percentage than AIN single crystals. In addition the surface of as-deposited film is too rough to apply to electronic devices. In order to overcome those limitations, nitrogen plasma treatment (NPT), as a novel heat-treatment, is used for the first time in this work. As NPT time increases, surface roughness is dramatically reduced and, at the same time, the Al-N bonds in the films become stable. As a result, chemical stability of nitrogen-plasma-treated AlN films increases sharply in a strongly alkaline solution, 2 M KOH. Furthermore, the interactions between AIN films and nitrogen plasma result in the improvement of electrical properties of AIN films, i.e., the leakage current density measured by I-V method is reduced. (C) 2000 The Electrochemical Society. S0013-4651(00)02-048-6. All rights reserved. | - |
dc.language | English | - |
dc.publisher | Electrochemical Soc Inc | - |
dc.subject | ALUMINUM NITRIDE | - |
dc.subject | SURFACE | - |
dc.subject | ORIENTATION | - |
dc.subject | DEFECTS | - |
dc.title | Effects of Nitrogen Plasma Treatment on the Characteristics of AlN Thin Film | - |
dc.type | Article | - |
dc.identifier.wosid | 000089264100056 | - |
dc.identifier.scopusid | 2-s2.0-0034272527 | - |
dc.type.rims | ART | - |
dc.citation.volume | 147 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 3535 | - |
dc.citation.endingpage | 3540 | - |
dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.contributor.nonIdAuthor | min-hee cho | - |
dc.contributor.nonIdAuthor | youn-seon kang | - |
dc.contributor.nonIdAuthor | hae-yeol kim | - |
dc.contributor.nonIdAuthor | paul s. lee | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ALUMINUM NITRIDE | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | ORIENTATION | - |
dc.subject.keywordPlus | DEFECTS | - |
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