One-Dimensional Subband Effects in a Gate-All-Around Silicon Quantum Wire Transistor

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A silicon quantum wire transistor, in which electrons are transported through a very narrow wire, has been fabricated using SOI (Silicon-On-Insulator) technology, electron beam lithography, anisotropic dry etching, and thermal oxidation. We have obtained the quantum wire with a width of 65 nm, which is fully embedded in silicon dioxide. These narrow dimension of the wire and large potential barrier between silicon and silicon dioxide make the electrons moving through the wire to experience one-dimensional confinement. The step-like structure in the conductance versus gate voltage curve, which is a typical evidence of one-dimensional conductance, has been observed at temperatures of below 4.2 K. A period of step appearance and a step size have been analyzed to compare experimental characteristics with theoretical calculation.
Publisher
KOREAN PHYSICAL SOC
Issue Date
1999-12
Language
English
Article Type
Article; Proceedings Paper
Keywords

CONDUCTANCE

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, no.94, pp.1007 - 1012

ISSN
0374-4884
URI
http://hdl.handle.net/10203/68978
Appears in Collection
EE-Journal Papers(저널논문)RIMS Journal Papers
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