Effect of annealing on fatigue properties of Sb-doped lead zirconate titanate thin films deposited by DC reactive sputtering

Cited 6 time in webofscience Cited 6 time in scopus
  • Hit : 273
  • Download : 0
The effect of annealing an the ferroelectric properties of Pt-based thin film capacitors of Sb-doped lead zirconate titanate [Pt/Pb(Zr0.48Ti0.52)O-3/Pt/SiO2/Si] were investigated. Undoped Pb(Zr0.48Ti0.52)O-3 (PZT0) and Sb-doped Pb(Zr0.48Ti0.52)O-3 (PZST07) thin films were annealed in oxygen atmosphere at 650 degrees C for 30 min. The Sb cation in a PZT thin Nm before and after annealing was confirmed to be trivalent (Sb3+) by X-ray photoelectron spectroscopy (XPS). The grain sizes of undoped PZT(PZT0) and Sb-doped PZT (PZST07) thin films after annealing are seen to increase. These changes of grain size affect the fatigue properties of PZT thin films. Annealed Sb-doped PZT (PZST07) thin films show good fatigue behavior (fatigue free up to 10(11) switching cycles) and a larger P-r*- P-r(boolean AND) value (31 mu C/cm(2)) than SrBi2Ta2O9 (SBT) thin films.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1999
Language
English
Article Type
Article
Keywords

ELECTRICAL-PROPERTIES; PB(ZR,TI)O-3; CAPACITORS

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.38, no.1A, pp.122 - 126

ISSN
0021-4922
DOI
10.1143/JJAP.38.122
URI
http://hdl.handle.net/10203/68965
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 6 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0