The electronic structures of epitaxial CrSi2 film prepared on Si(111) substrate

Abstract

The valence band (VB) electronic structures of CrSi2 were studied by synchrotron radiation photoemission. Overall features of the VB photoemission spectra measured at room temperature (RT) and 20 K by using synchrotron radiation. (photon energy, h nu = 20-130 eV) were similar. Two characteristic emissions were observed corresponding to the bonding and the nonbonding Cr-d partial density of states (PDOS) in the CrSi2. The onset of the VB photoemission measured at 20 K was located at about 0.32 eV below Fermi level, due to the energy band gap of CrSi2 more than 0.32 eV, (C) 1999 Elsevier Science B.V, All rights reserved.