DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, JW | ko |
dc.contributor.author | Lee, NI | ko |
dc.contributor.author | Han, JI | ko |
dc.contributor.author | Han, Chul-Hi | ko |
dc.date.accessioned | 2013-02-27T12:41:46Z | - |
dc.date.available | 2013-02-27T12:41:46Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-05 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.18, no.5, pp.172 - 174 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/68647 | - |
dc.description.abstract | Polysilicon thin-film transistors (poly-Si TFT's) with thin-gate oxide grown by electron cyclotron resonance (ECR) nitrous oxide (N2O)-plasma oxidation is presented, ECR N2O-plasma oxidation successfully incorporates nitrogen atoms at the SiO2/poly-Si interface, consequently forms a nitrogen-rich layer with Si = N bonds at a binding energy of 397.8 eV, ECR N2O-plasma oxide grown on poly-Si films shows higher breakdown fields than thermal oxide. The fabricated poly-Si TFT's with N2O-plasma oxide show better performance than those with ECR O-2-plasma oxide, which results not only front the smooth interface but also oxygen- and nitrogen-plasma passivation. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Characteristics of polysilicon thin-film transistor with thin-gate dielectric grown by electron cyclotron resonance nitrous oxide plasma | - |
dc.type | Article | - |
dc.identifier.wosid | A1997WU99600002 | - |
dc.identifier.scopusid | 2-s2.0-0031146382 | - |
dc.type.rims | ART | - |
dc.citation.volume | 18 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 172 | - |
dc.citation.endingpage | 174 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.contributor.localauthor | Han, Chul-Hi | - |
dc.contributor.nonIdAuthor | Lee, JW | - |
dc.contributor.nonIdAuthor | Lee, NI | - |
dc.contributor.nonIdAuthor | Han, JI | - |
dc.type.journalArticle | Article | - |
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