Direct Wafer Bonding법에 의한 InP 기판과 Si₃N₄/InP의 접합특성The Characteristics of the Direct Wafer Bonding between InP Wafers and Si3N4/InP
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김선운 | ko |
| dc.contributor.author | 신동석 | ko |
| dc.contributor.author | 이정용 | ko |
| dc.contributor.author | 최인훈 | ko |
| dc.date.accessioned | 2013-02-27T11:53:31Z | - |
| dc.date.available | 2013-02-27T11:53:31Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1998-12 | - |
| dc.identifier.citation | 한국재료학회지, v.8, no.10, pp.890 - 897 | - |
| dc.identifier.issn | 1225-0562 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/68404 | - |
| dc.language | Korean | - |
| dc.publisher | 한국재료학회 | - |
| dc.title | Direct Wafer Bonding법에 의한 InP 기판과 Si₃N₄/InP의 접합특성 | - |
| dc.title.alternative | The Characteristics of the Direct Wafer Bonding between InP Wafers and Si3N4/InP | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 8 | - |
| dc.citation.issue | 10 | - |
| dc.citation.beginningpage | 890 | - |
| dc.citation.endingpage | 897 | - |
| dc.citation.publicationname | 한국재료학회지 | - |
| dc.contributor.localauthor | 이정용 | - |
| dc.contributor.nonIdAuthor | 김선운 | - |
| dc.contributor.nonIdAuthor | 신동석 | - |
| dc.contributor.nonIdAuthor | 최인훈 | - |
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