DC Field | Value | Language |
---|---|---|
dc.contributor.author | Song, BH | ko |
dc.contributor.author | Yoon, Duk Yong | ko |
dc.date.accessioned | 2013-02-27T10:27:37Z | - |
dc.date.available | 2013-02-27T10:27:37Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-01 | - |
dc.identifier.citation | DIAMOND AND RELATED MATERIALS, v.9, no.1, pp.82 - 86 | - |
dc.identifier.issn | 0925-9635 | - |
dc.identifier.uri | http://hdl.handle.net/10203/67987 | - |
dc.description.abstract | The origin of bias-enhanced nucleation and growth of diamond has been investigated in hot filament chemical vapor deposition with two parallel W electrode wires inserted between filament and two floating Si substrates. An electrical voltage has been applied to the W electrodes to produce a glow discharge, which occurs in bias-enhanced deposition processes, during deposition. Substantial nucleation and growth enhancements occurred on the substrate near the negative glow of the d.c. discharge under the cathode wire. These observations indicate that the enhanced deposition of diamond in both positive and negative bias processes arises from chemically active species in the negative glow region rather than from electron or ion bombardment effects. (C) 2000 Elsevier Science S.A. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | BIAS-ENHANCED NUCLEATION | - |
dc.subject | THIN-FILMS | - |
dc.subject | ELECTRIC-FIELD | - |
dc.subject | GROWTH | - |
dc.subject | PLASMA | - |
dc.subject | SILICON | - |
dc.subject | SI | - |
dc.subject | EMISSION | - |
dc.subject | MECHANISM | - |
dc.title | The effect of d.c. glow discharge on hot filament chemical vapor deposition of diamond | - |
dc.type | Article | - |
dc.identifier.wosid | 000085295000013 | - |
dc.type.rims | ART | - |
dc.citation.volume | 9 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 82 | - |
dc.citation.endingpage | 86 | - |
dc.citation.publicationname | DIAMOND AND RELATED MATERIALS | - |
dc.identifier.doi | 10.1016/S0925-9635(99)00249-6 | - |
dc.contributor.nonIdAuthor | Song, BH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | CVD | - |
dc.subject.keywordAuthor | diamond deposition | - |
dc.subject.keywordAuthor | discharge glow | - |
dc.subject.keywordAuthor | electrical bias | - |
dc.subject.keywordPlus | BIAS-ENHANCED NUCLEATION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | ELECTRIC-FIELD | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | MECHANISM | - |
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