A New Lateral Field Emission Device Using Chemical-Mechanical Polishing

Abstract

A polysilicon lateral field emission device using chemical-mechanical polishing (CMP) is proposed and experimental results on the first prototype is reported. In this method, dry oxidation process determines the interelectrode gap. Thus, it is relatively easy to form electrode gaps with dimensions less than 1 mu m. Also, the process allows for good uniformity and reproducibility in controlling the interelectrode gap. The tnm-on voltage of the fabricated device with interelectrode gap of 3500 Angstrom is as low as 5.4 V and the emission current is as high as 9 mu A at 9.3 V. From the Fowler-Nordheim (FN) equation, field emitting area (alpha) and field enhancement factor.(beta) are estimated to explain the low turn-on voltage and the high emission current. The emission current fluctuation is about +/-4% for 25 min.