Ta(OC2H5)와 NH3를 이용한 산화탄탈륨 막의 원자층 증착 및 특성Atomic Layer Deposition Characterization of Tantalum Oxide Films Using Ta(OC2H5)5NH3
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 송현정 | ko |
| dc.contributor.author | 심규찬 | ko |
| dc.contributor.author | 이춘수 | ko |
| dc.contributor.author | 강상원 | ko |
| dc.date.accessioned | 2013-02-27T09:20:40Z | - |
| dc.date.available | 2013-02-27T09:20:40Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1998-01 | - |
| dc.identifier.citation | 한국재료학회지, v.8, no.10, pp.945 - 949 | - |
| dc.identifier.issn | 1225-0562 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/67719 | - |
| dc.language | Korean | - |
| dc.publisher | 한국재료학회 | - |
| dc.title | Ta(OC2H5)와 NH3를 이용한 산화탄탈륨 막의 원자층 증착 및 특성 | - |
| dc.title.alternative | Atomic Layer Deposition Characterization of Tantalum Oxide Films Using Ta(OC2H5)5NH3 | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 8 | - |
| dc.citation.issue | 10 | - |
| dc.citation.beginningpage | 945 | - |
| dc.citation.endingpage | 949 | - |
| dc.citation.publicationname | 한국재료학회지 | - |
| dc.contributor.localauthor | 강상원 | - |
| dc.contributor.nonIdAuthor | 송현정 | - |
| dc.contributor.nonIdAuthor | 심규찬 | - |
| dc.contributor.nonIdAuthor | 이춘수 | - |
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