SiC/SiO2 계면의 고온 기공 발생에 관한 열역학적 계산Thermodynamic Calculations of High Temperature Bubble Formation at SiC/SiO2 Interface
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이문희 | ko |
| dc.contributor.author | 박종욱 | ko |
| dc.date.accessioned | 2013-02-27T08:24:54Z | - |
| dc.date.available | 2013-02-27T08:24:54Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1990 | - |
| dc.identifier.citation | 한국세라믹학회지, v.27, no.4, pp.543 - 547 | - |
| dc.identifier.issn | 1225-1372 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/67475 | - |
| dc.description.abstract | Numerous researchers have observed the bubble fromation at SiC/SiO2 interface from 1300℃ to 1700℃. According to thermodynamic calculation, the bubble could be formed from the microscopic impurities which result from the chemical vapor deposition of SiC. When C-impurity is present at the interface, it is calculated that the bubble is formed at 1511°C and when Si is present, the bubble is formed at 1770℃. These results are very close to the prior observations, but the calculation can not explain the observation of bubble below 1500℃. | - |
| dc.language | Korean | - |
| dc.publisher | 한국세라믹학회 | - |
| dc.title | SiC/SiO2 계면의 고온 기공 발생에 관한 열역학적 계산 | - |
| dc.title.alternative | Thermodynamic Calculations of High Temperature Bubble Formation at SiC/SiO2 Interface | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 27 | - |
| dc.citation.issue | 4 | - |
| dc.citation.beginningpage | 543 | - |
| dc.citation.endingpage | 547 | - |
| dc.citation.publicationname | 한국세라믹학회지 | - |
| dc.contributor.localauthor | 박종욱 | - |
| dc.contributor.nonIdAuthor | 이문희 | - |
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