ELECTRICAL AND MICROSTRUCTURAL PROPERTIES OF BATIO3 THIN-FILMS ON P-SI SUBSTRATES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Abstract

Metalorganic chemical vapor deposition of BaTiO3 using Ba(tmhd)2, Ti(OC3H7)4, and N2O via thermal pyrolysis was performed in order to produce BaTiO3 insulator gates with a dielectric constant of high magnitude. Transmission electron microscopy results showed that the BaTiO3 films had a polycrystalline. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a BaTiO3 insulator gate. The dielectric constant determined from the capacitance-voltage measurements was as large as 1157. These results indicate that the BaTiO3 layer may be used for high-density dynamic-memory applications.