DC Field | Value | Language |
---|---|---|
dc.contributor.author | PARK, HH | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | CHO, KI | ko |
dc.contributor.author | PAEK, MC | ko |
dc.contributor.author | KWON, OJ | ko |
dc.contributor.author | CHOI, CK | ko |
dc.contributor.author | NAM, KS | ko |
dc.date.accessioned | 2013-02-27T08:11:56Z | - |
dc.date.available | 2013-02-27T08:11:56Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1992-02 | - |
dc.identifier.citation | THIN SOLID FILMS, v.208, no.2, pp.168 - 171 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/67406 | - |
dc.description.abstract | The formation of TiAs precipitates between TiSi2 with C54 structure and arsenic-doped polysilicon and the influence of TiAs and silicon resulting from the reaction TiSi2 + As --> TiAs + 2Si on layer morphology degradation have been studied. The formation of TiAs precipitates has been revealed by X-ray diffraction in a sample annealed at 900-degrees-C for 60 min and a sequential increase in sheet resistance with increasing annealing time has been observed. Cross-sectional scanning electron microscopy of the sample annealed for 60 min has shown irregular-shaped protrusions. Point analyses by Auger electron spectroscopy and cross-sectional transmission electron microscopy of the same sample have shown the presence of TiAs precipitates and extra silicon near the TiSi2 - polysilicon interface under the protrusion area. From the results it has been found that TiAs precipitates and extra silicon resulting from the reaction TiSi2 + As --> TiAs + 2Si lead to morphology degradation of this system. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA LAUSANNE | - |
dc.subject | SILICON | - |
dc.title | INFLUENCE OF TIAS PRECIPITATE FORMATION ON MORPHOLOGY DEGRADATION OF THE TISI2/AS-DOPED POLYSILICON SYSTEM | - |
dc.type | Article | - |
dc.identifier.wosid | A1992HK51200005 | - |
dc.identifier.scopusid | 2-s2.0-0026821308 | - |
dc.type.rims | ART | - |
dc.citation.volume | 208 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 168 | - |
dc.citation.endingpage | 171 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | PARK, HH | - |
dc.contributor.nonIdAuthor | CHO, KI | - |
dc.contributor.nonIdAuthor | PAEK, MC | - |
dc.contributor.nonIdAuthor | KWON, OJ | - |
dc.contributor.nonIdAuthor | CHOI, CK | - |
dc.contributor.nonIdAuthor | NAM, KS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SILICON | - |
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