DC Field | Value | Language |
---|---|---|
dc.contributor.author | KIM, TW | ko |
dc.contributor.author | KIM, Y | ko |
dc.contributor.author | MIN, SK | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | LEE, SJ | ko |
dc.date.accessioned | 2013-02-27T07:57:29Z | - |
dc.date.available | 2013-02-27T07:57:29Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1994-10 | - |
dc.identifier.citation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.9, no.10, pp.1823 - 1826 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | http://hdl.handle.net/10203/67355 | - |
dc.description.abstract | Transmission electron microscopy (TEM), capacitance-voltage (C-V), and photoluminescence (PL) measurements have been performed to characterize the properties of edge delta-doped and centre delta-doped Al0.27Ga0.73As/GaAs single quantum wells grown by metalorganic chemical vapor deposition. Direct observation of the Si delta-doped layer in GaAs quantum wells has been achieved by TEM, and the results of the C-V profiles indicate that the full width half-maximum value of centre delta-doped quantum wells is much narrow than that of edge delta-doped quantum wells. Temperature-dependent PL spectra of centre delta-doped quantum wells show the strong luminescence attributed to the Fermi edge singularity caused by enhanced confinement of carriers by the quantum well. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | FERMI-EDGE SINGULARITY | - |
dc.subject | GAAS | - |
dc.subject | MODULATION | - |
dc.subject | SUBBANDS | - |
dc.subject | SPECTRA | - |
dc.subject | ALGAAS | - |
dc.title | STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES OF SI DELTA-DOPED AL0.27GA0.73AS/GAAS SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION | - |
dc.type | Article | - |
dc.identifier.wosid | A1994PL90300012 | - |
dc.type.rims | ART | - |
dc.citation.volume | 9 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 1823 | - |
dc.citation.endingpage | 1826 | - |
dc.citation.publicationname | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | KIM, TW | - |
dc.contributor.nonIdAuthor | KIM, Y | - |
dc.contributor.nonIdAuthor | MIN, SK | - |
dc.contributor.nonIdAuthor | LEE, SJ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FERMI-EDGE SINGULARITY | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | MODULATION | - |
dc.subject.keywordPlus | SUBBANDS | - |
dc.subject.keywordPlus | SPECTRA | - |
dc.subject.keywordPlus | ALGAAS | - |
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