DC Field | Value | Language |
---|---|---|
dc.contributor.author | Won Gyu Lee | ko |
dc.contributor.author | Woo, Seong-Ihl | ko |
dc.date.accessioned | 2013-02-27T03:57:47Z | - |
dc.date.available | 2013-02-27T03:57:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1994 | - |
dc.identifier.citation | INTEGRATED FERROELECTRICS, v.5, no.2, pp.107 - 108 | - |
dc.identifier.issn | 1058-4587 | - |
dc.identifier.uri | http://hdl.handle.net/10203/66315 | - |
dc.description.abstract | PbTiO3 thin films on Si substrate were prepared by plasma enhanced chemical vapor deposition (PECVD) using Ti(O-i-C3H7)4, Pb(C2H5)4 and oxygen. The composition of PECVD PbTiO3 thin films was intensively influenced by the input flow rate ratio of precursors, while it was independent of the deposition temperatures. As-deposited PECVD PbTiO3 thin film showed a uniform distribution of the Pb, Ti and C component throughout the bulk of film. The PECVD PbTiO3 thin films after annealing at 650°C under O2 ambient for 1 hr were converted from the amorphous phase to the crystalline perovskite phase. The phase transition between the tetragonal and the cubic phase occurred at about 500°C. The properties of thin films such as morphology, structure, dielectric constant, leakage current and P-E hysteresis-were also investigated. | - |
dc.language | English | - |
dc.publisher | Taylor & Francis Ltd | - |
dc.title | Preparation and characteristics of lead titanate by glow discharge using metal-organic precursors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 5 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 107 | - |
dc.citation.endingpage | 108 | - |
dc.citation.publicationname | INTEGRATED FERROELECTRICS | - |
dc.contributor.localauthor | Woo, Seong-Ihl | - |
dc.contributor.nonIdAuthor | Won Gyu Lee | - |
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