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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

VACANCY-TYPE DEFECTS IN SI+-IMPLANTED GAAS AND ITS EFFECTS ON ELECTRICAL ACTIVATION BY RAPID THERMAL ANNEALING

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dc.contributor.authorLEE, JLko
dc.contributor.authorUEDONO, Ako
dc.contributor.authorTANIGAWA, Sko
dc.contributor.authorLee, JeongYongko
dc.date.accessioned2013-02-25T21:59:34Z-
dc.date.available2013-02-25T21:59:34Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1990-05-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.67, no.10, pp.6153 - 6158-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/65610-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleVACANCY-TYPE DEFECTS IN SI+-IMPLANTED GAAS AND ITS EFFECTS ON ELECTRICAL ACTIVATION BY RAPID THERMAL ANNEALING-
dc.typeArticle-
dc.identifier.wosidA1990DE15000020-
dc.identifier.scopusid2-s2.0-0342517326-
dc.type.rimsART-
dc.citation.volume67-
dc.citation.issue10-
dc.citation.beginningpage6153-
dc.citation.endingpage6158-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.1063/1.345177-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorLEE, JL-
dc.contributor.nonIdAuthorUEDONO, A-
dc.contributor.nonIdAuthorTANIGAWA, S-
dc.type.journalArticleArticle-
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