Rapid Formation of High-Temperature Bi-Based Superconductors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | W.S. Um | ko |
| dc.contributor.author | Kim, Ho Gi | ko |
| dc.date.accessioned | 2013-02-25T21:31:07Z | - |
| dc.date.available | 2013-02-25T21:31:07Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1990 | - |
| dc.identifier.citation | MATERIALS AND PROCESSING REPORT, v.5, no.7 | - |
| dc.identifier.issn | 0887-1949 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/65454 | - |
| dc.language | English | - |
| dc.publisher | Massachusetts Institute of Technology. | - |
| dc.title | Rapid Formation of High-Temperature Bi-Based Superconductors | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 5 | - |
| dc.citation.issue | 7 | - |
| dc.citation.publicationname | MATERIALS AND PROCESSING REPORT | - |
| dc.contributor.localauthor | Kim, Ho Gi | - |
| dc.contributor.nonIdAuthor | W.S. Um | - |
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