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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

STRUCTURAL AND ELECTRICAL-PROPERTIES OF A STRAINED INSB/GAAS HETEROSTRUCTURE

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dc.contributor.authorKIM, TWko
dc.contributor.authorYOO, BSko
dc.contributor.authorMCKEE, MAko
dc.contributor.authorLee, JeongYongko
dc.date.accessioned2013-02-25T21:13:04Z-
dc.date.available2013-02-25T21:13:04Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1994-03-
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.142, no.1, pp.23 - 27-
dc.identifier.issn0031-8965-
dc.identifier.urihttp://hdl.handle.net/10203/65330-
dc.languageEnglish-
dc.publisherAKADEMIE VERLAG GMBH-
dc.subjectMOLECULAR-BEAM EPITAXY-
dc.subjectCHEMICAL VAPOR-DEPOSITION-
dc.subjectINSB-
dc.subjectGROWTH-
dc.subjectGAAS-
dc.subjectINAS1-XSBX-
dc.subjectSCATTERING-
dc.subjectTRANSPORT-
dc.subjectFILMS-
dc.titleSTRUCTURAL AND ELECTRICAL-PROPERTIES OF A STRAINED INSB/GAAS HETEROSTRUCTURE-
dc.typeArticle-
dc.identifier.wosidA1994NG17500038-
dc.type.rimsART-
dc.citation.volume142-
dc.citation.issue1-
dc.citation.beginningpage23-
dc.citation.endingpage27-
dc.citation.publicationnamePHYSICA STATUS SOLIDI A-APPLIED RESEARCH-
dc.contributor.localauthorLee, JeongYong-
dc.contributor.nonIdAuthorKIM, TW-
dc.contributor.nonIdAuthorYOO, BS-
dc.contributor.nonIdAuthorMCKEE, MA-
dc.type.journalArticleNote-
dc.subject.keywordPlusMOLECULAR-BEAM EPITAXY-
dc.subject.keywordPlusCHEMICAL VAPOR-DEPOSITION-
dc.subject.keywordPlusINSB-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusGAAS-
dc.subject.keywordPlusINAS1-XSBX-
dc.subject.keywordPlusSCATTERING-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusFILMS-
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MS-Journal Papers(저널논문)
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