Plasma enhanced chemically vapor deposited aluminum oxide films as a new etch mask material for microelectronic fabrication
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이원종 | ko |
| dc.date.accessioned | 2013-02-25T20:20:00Z | - |
| dc.date.available | 2013-02-25T20:20:00Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994-04 | - |
| dc.identifier.citation | KOREAN APPLIED PHYSICS, v.7, no.4, pp.289 - 296 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/64957 | - |
| dc.title | Plasma enhanced chemically vapor deposited aluminum oxide films as a new etch mask material for microelectronic fabrication | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 7 | - |
| dc.citation.issue | 4 | - |
| dc.citation.beginningpage | 289 | - |
| dc.citation.endingpage | 296 | - |
| dc.citation.publicationname | KOREAN APPLIED PHYSICS | - |
| dc.contributor.localauthor | 이원종 | - |
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