Interface Structure of the Thin Epitaxial CaF2 Film Grown on Si(111) and GaAs(111) Substrates
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | K.H. Park | ko |
| dc.contributor.author | B.S. Yoo | ko |
| dc.contributor.author | S.J. Park | ko |
| dc.contributor.author | I.H. Lee | ko |
| dc.contributor.author | Lee, JeongYong | ko |
| dc.contributor.author | H.C. Lee | ko |
| dc.date.accessioned | 2013-02-25T20:00:19Z | - |
| dc.date.available | 2013-02-25T20:00:19Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1992-12 | - |
| dc.identifier.citation | KOREAN APPLIED PHYSICS, v.5, no.2, pp.162 - 165 | - |
| dc.identifier.issn | 1013-7009 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/64865 | - |
| dc.language | Korean | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | Interface Structure of the Thin Epitaxial CaF2 Film Grown on Si(111) and GaAs(111) Substrates | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 5 | - |
| dc.citation.issue | 2 | - |
| dc.citation.beginningpage | 162 | - |
| dc.citation.endingpage | 165 | - |
| dc.citation.publicationname | KOREAN APPLIED PHYSICS | - |
| dc.contributor.localauthor | Lee, JeongYong | - |
| dc.contributor.nonIdAuthor | K.H. Park | - |
| dc.contributor.nonIdAuthor | B.S. Yoo | - |
| dc.contributor.nonIdAuthor | S.J. Park | - |
| dc.contributor.nonIdAuthor | I.H. Lee | - |
| dc.contributor.nonIdAuthor | H.C. Lee | - |
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