STRUCTURAL, MAGNETOTRANSPORT AND SUBBAND STUDIES OF AN IN0.52AL0.48AS/IN0.53GA0.47AS ONE-SIDE MODULATION-DOPED QUANTUM-WELL

Abstract

Shubnikov-de Haas (SdH) and van der Pauw Hall effect measurements on In0.52Al0.48AS/In0.53Ga0.47 As/In0.52Al0.40As one-side modulation-doped quantum wells grown by metalorganic chemical vapour deposition have been carried out to investigate the magnetotransport properties of an electron gas and to determine the subband energies and wavefunctions in a single quantum well. Transmission electron microscopy measurements show that the In0.53Ga0.47As/In0.52Al0.48As heterointerfaces have a perfect lattice match. The SdH measurements at 1.5 K have demonstrated clearly the existence of a quasi-two-dimensional electron gas in the quantum well. The fast Fourier transformation results for the SdH data indicate clearly the occupation of two subbands in the In0.53Ga0.47As single quantum well. Electron energy subbands in the quantum well were calculated by a self-consistent method taking into account exchange-correlation effects and making use of the experimentally determined carrier density.