FET CHARACTERIZATION USING GATED-TLM STRUCTURE

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Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1985-12
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.32, no.12, pp.2824 - 2829

ISSN
0018-9383
DOI
10.1109/T-ED.1985.22422
URI
http://hdl.handle.net/10203/63645
Appears in Collection
EE-Journal Papers(저널논문)
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