FET CHARACTERIZATION USING GATED-TLM STRUCTURE
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BAIER, SM | ko |
| dc.contributor.author | SHUR, MS | ko |
| dc.contributor.author | Lee, Kwyro | ko |
| dc.contributor.author | CIRILLO, NC | ko |
| dc.contributor.author | HANKA, SA | ko |
| dc.date.accessioned | 2013-02-25T16:43:49Z | - |
| dc.date.available | 2013-02-25T16:43:49Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1985-12 | - |
| dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.32, no.12, pp.2824 - 2829 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/63645 | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | FET CHARACTERIZATION USING GATED-TLM STRUCTURE | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1985AWY1900038 | - |
| dc.identifier.scopusid | 2-s2.0-0022229525 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 32 | - |
| dc.citation.issue | 12 | - |
| dc.citation.beginningpage | 2824 | - |
| dc.citation.endingpage | 2829 | - |
| dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.identifier.doi | 10.1109/T-ED.1985.22422 | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
| dc.contributor.nonIdAuthor | BAIER, SM | - |
| dc.contributor.nonIdAuthor | SHUR, MS | - |
| dc.contributor.nonIdAuthor | CIRILLO, NC | - |
| dc.contributor.nonIdAuthor | HANKA, SA | - |
| dc.type.journalArticle | Article | - |
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