Direct Growing of Lightly Doped Epitaxial Silicon without Misfit Dislocation on Heavily Boron-Doped Silicon Layer

Abstract

Without buffer layers, a lightly boron-doped epitaxial layer of good crystalline quality has been directly grown on a heavily boron-doped silicon layer by eliminating misfit dislocations in the heavily boron-doped layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of an n(+)/p diode fabricated in the epitaxial silicon has been measured to be 0.6 nA/cm(2) at 5 V. (C) 1994 American Institute of Physics.