FAST SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS ON GLASS USING LOW-TEMPERATURE MULTISTEP RAPID THERMAL ANNEALING

Abstract

Effects of multi-step rapid thermal annealing of plasma-deposited amorphous silicon films on Coming 7059 glass are investigated. A three-step rapid thermal annealing for 10 s/step at 730-degrees-C after film deposition reduces the activation energy of electrical conductivity for silicon films from 0.64 to 0.51 eV and causes (111) grain growth with a size of 1500 angstrom, which is determined using scanning electron microscopy, Raman spectroscopy and X-ray diffractometry.