DC Field | Value | Language |
---|---|---|
dc.contributor.author | LEE, CW | ko |
dc.contributor.author | Lee, Choochon | ko |
dc.contributor.author | KIM, YT | ko |
dc.date.accessioned | 2013-02-25T14:55:08Z | - |
dc.date.available | 2013-02-25T14:55:08Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1993-02 | - |
dc.identifier.citation | APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, v.56, no.2, pp.123 - 126 | - |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.uri | http://hdl.handle.net/10203/63015 | - |
dc.description.abstract | Effects of multi-step rapid thermal annealing of plasma-deposited amorphous silicon films on Coming 7059 glass are investigated. A three-step rapid thermal annealing for 10 s/step at 730-degrees-C after film deposition reduces the activation energy of electrical conductivity for silicon films from 0.64 to 0.51 eV and causes (111) grain growth with a size of 1500 angstrom, which is determined using scanning electron microscopy, Raman spectroscopy and X-ray diffractometry. | - |
dc.language | English | - |
dc.publisher | SPRINGER VERLAG | - |
dc.subject | POLYCRYSTALLINE SILICON | - |
dc.title | FAST SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS ON GLASS USING LOW-TEMPERATURE MULTISTEP RAPID THERMAL ANNEALING | - |
dc.type | Article | - |
dc.identifier.wosid | A1993KH89800006 | - |
dc.type.rims | ART | - |
dc.citation.volume | 56 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 123 | - |
dc.citation.endingpage | 126 | - |
dc.citation.publicationname | APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING | - |
dc.identifier.doi | 10.1007/BF00517678 | - |
dc.contributor.nonIdAuthor | LEE, CW | - |
dc.contributor.nonIdAuthor | KIM, YT | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | POLYCRYSTALLINE SILICON | - |
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