DEVICE CHARACTERIZATION OF L-TYPE MOS-TRANSISTORS
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | C.H.Han | ko |
| dc.date.accessioned | 2013-02-25T14:00:36Z | - |
| dc.date.available | 2013-02-25T14:00:36Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1990-07 | - |
| dc.identifier.citation | SOLID-STATE ELECTRONICS, v.33, no.7, pp.799 - 804 | - |
| dc.identifier.issn | 0038-1101 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/62694 | - |
| dc.language | English | - |
| dc.publisher | Pergamon-Elsevier Science Ltd | - |
| dc.title | DEVICE CHARACTERIZATION OF L-TYPE MOS-TRANSISTORS | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1990DR28800002 | - |
| dc.identifier.scopusid | 2-s2.0-0025454711 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 33 | - |
| dc.citation.issue | 7 | - |
| dc.citation.beginningpage | 799 | - |
| dc.citation.endingpage | 804 | - |
| dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
| dc.identifier.doi | 10.1016/0038-1101(90)90058-M | - |
| dc.contributor.localauthor | C.H.Han | - |
| dc.type.journalArticle | Article | - |
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