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NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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High Efficient Polarization-Matched InGaN/MgZnO Quantum Well Structures Park, Seoung-Hwan; Ahn, Doyeol; Cho, Yong-Hoon, IEEE PHOTONICS TECHNOLOGY LETTERS, v.24, no.6, pp.494 - 496, 2012-03 | |
Pump-probe spectroscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN Schmidt, TJ; Cho, Yong-Hoon; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.13, pp.1892 - 1894, 1998-09 | |
Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition Kim, Je Hyung; Elmaghraoui, Donia; Leroux, Mathieu; Korytov, Maxim; Vennegues, Philippe; Jaziri, Sihem; Brault, Julien; Cho, Yong-Hoon, NANOTECHNOLOGY, v.25, no.30, pp.305703-1 - 305703-11, 2014-08 | |
Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis Kim, Min Kwan; Choi, Sunghan; Lee, Joo-Hyung; Park, Chunghyun; Chung, Tae-Hoon; Baek, Jong Hyeob; Cho, Yong-Hoon, SCIENTIFIC REPORTS, v.7, pp.42221, 2017-02 |
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