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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Song, JJ; Keller, S; Minsky, MS; Hu, E; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.8, pp.1128 - 1130, 1998-08 | |
| Effects of substrate misorientation on the formation and characteristics of self-assembled InP/InGaP quantum dots Kwon, YH; Cho, Yong-Hoon; Choe, BD; Park, SK; Jeong, WG, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.4A, pp.366 - 368, 1998-04 | |
| High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration Cho, Yong-Hoon; Fedler, F; Hauenstein, RJ; Park, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, JOURNAL OF APPLIED PHYSICS, v.85, no.5, pp.3006 - 3008, 1999-03 | |
| High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells Bidnyk, S; Schmidt, TJ; Cho, Yong-Hoon; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.72, no.13, pp.1623 - 1625, 1998-03 |
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