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Results 1-10 of 16 (Search time: 0.013 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells

Cho, Yong-Hoon; Little, BD; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, 1999

2
Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells

Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, pp.6 - 44, 1999

3
Multiferroics and magnetoelectrics: thin films and nanostructures

Martin, L. W.; Crane, S. P.; Chu, Y. H; Holcomb, M. B.; Gajek, M.; Huijben, M.; Yang, Chan-Ho; Balke, N.; Ramesh, R., JOURNAL OF PHYSICS-CONDENSED MATTER, v.20, no.43, 2008-10

4
Linear and nonlinear optical properties of In(x)Ga(1-x)N/GaN heterostructures

Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, PHYSICAL REVIEW B, v.61, no.11, pp.7571 - 7588, 2000-03

5
Low-dielectric-constant-film deposition with various gases in a helicon plasma reactor

Yun, SM; Chang, Hong-Young; Oh, KS; Choi, CK, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.38, no.7B, pp.4531 - 4534, 1999-07

6
Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells

Cho, Yong-Hoon; Song, JJ; Keller, S; Minsky, MS; Hu, E; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.8, pp.1128 - 1130, 1998-08

7
"S-shaped" temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

Cho, Yong-Hoon; Gainer, GH; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.10, pp.1370 - 1372, 1998-09

8
A study on low dielectric material deposition using a helicon plasma source

Kim, JH; Seo, SH; Yun, SM; Chang, Hong-Young; Lee, KM; Choi, CK, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.143, no.9, pp.2990 - 2995, 1996-09

9
Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme

Park, SH; Kim, J; Jeon, H; Sakong, T; Lee, SN; Chae, S; Park, Y; Jeong, CH; Yeom, GY; Cho, Yong-Hoon, APPLIED PHYSICS LETTERS, v.83, no.11, pp.2121 - 2123, 2003-09

10
Optical properties and carrier dynamics of two-dimensional electrons in AlGaN/GaN single heterostructures

Kwack, HS; Cho, Yong-Hoon; Kim, GH; Park, MR; Youn, DH; Bae, SB; Lee, KS; Lee, JH; Kim, TW; Kang, TW; Wang, KL, APPLIED PHYSICS LETTERS, v.87, pp.3751 - 3762, 2005-07

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