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Results 1-10 of 13 (Search time: 0.003 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Absorption, emission, and carrier dynamics study of MOCVD-grown Al(x)Ga(1-x)N alloys Cho, Yong-Hoon; Gainer, GH; Lam, JB; Song, JJ; Yang, W; Kang, TW, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.189 - 192, 2001-12 | |
| Depth-resolved optical studies of excitonic and phonon-assisted transitions in ZnO epilayers Cho, Yong-Hoon; Kim, JY; Kwack, HS; Kwon, BJ; Dang, LS; Ko, HJ; Yao, T, APPLIED PHYSICS LETTERS, v.89, pp.1681 - 1688, 2006-11 | |
| Photovoltaic cells fabricated utilizing core-shell CdSe/ZnSe quantum dot/multiwalled carbon nanotube heterostructures Li, Fushan; Son, Dong Ick; Kim, Tae Whan; Ryu, Euidock; Kim, Sang Wook; Lee, Sun Kyun; Cho, Yong-Hoon, APPLIED PHYSICS LETTERS, v.95, no.6, 2009-08 | |
| Optical characteristics of hexagonal GaN self-assembled quantum dots: Strong influence of built-in electric field and carrier localization Cho, Yong-Hoon; Kwon, BJ; Barjon, J; Brault, J; Daudin, B; Mariette, H; Dang, LS, APPLIED PHYSICS LETTERS, v.81, no.26, pp.4934 - 4936, 2002-12 | |
| Investigation of optical and electrical properties of Mg-doped p-InxGa1-xN, p-GaN and p-AlyGa1-yN grown by MOCVD Lee, SN; Son, J; Sakong, T; Lee, W; Paek, H; Yoon, E; Kim, J; Cho, Yong-Hoon; Nam, O; Park, Y, JOURNAL OF CRYSTAL GROWTH, v.272, pp.455 - 459, 2004-12 | |
| Influence of thermal damage and the interruption time on the optical properties of InGaN quantum wall structures Cho, Yong-Hoon; Son, CW; Kim, JY; Kim, BM; Lee, WS; Lee, SN; Son, JK; Nam, H; Park, YJ, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.44, pp.L792 - L795, 2004-04 | |
| Optical properties and carrier dynamics of two-dimensional electrons in AlGaN/GaN single heterostructures Kwack, HS; Cho, Yong-Hoon; Kim, GH; Park, MR; Youn, DH; Bae, SB; Lee, KS; Lee, JH; Kim, TW; Kang, TW; Wang, KL, APPLIED PHYSICS LETTERS, v.87, pp.3751 - 3762, 2005-07 | |
| Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer Sun, YP; Cho, Yong-Hoon; Suh, EK; Lee, HJ; Choi, RJ; Hahn, YB, APPLIED PHYSICS LETTERS, v.84, no.1, pp.49 - 51, 2004-01 | |
| Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode Ryu, SP; Lee, YT; Cho, NK; Choi, WJ; Song, JD; Kwack, HS; Cho, Yong-Hoon, JOURNAL OF APPLIED PHYSICS, v.102, pp.561 - 569, 2007-07 | |
| Effect of surface plasmon polariton mode on spontaneous emission in gold coated GaN/InGaN quantum-well structures Park, CH; Choi, JW; Cho, Yong-Hoon; Kim, SI; Son, JK, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, pp.905 - 909, 2007-03 |