Absorption, emission, and carrier dynamics study of MOCVD-grown Al(x)Ga(1-x)N alloys

Cited 3 time in webofscience Cited 0 time in scopus
  • Hit : 318
  • Download : 0
Optical absorption, emission, and carrier recombination characteristics of Al(x)Ga(1-x)N epilayers (x = 0.17 and 0.33) were systematically studied by means of transmission, photoluminescence (PL), and time-resolved PL spectroscopy, respectively. A typical energy-gap shrinkage behavior with temperature was observed for both Al(x)Ga(1-x)N epilayers by absorption measurements, but all anomalous PL temperature dependence was observed: (i) a decrease-increase-decrease behavior of the PL peak energy and (ii) an increase-decrease-increase behavior of the spectral width with increasing temperature. We observed that the effective lifetime was enhanced in the temperature region showing the anomalous temperature-induced emission behavior, reflecting superior luminescence efficiency by suppressing non-radiative processes. The anomalous temperature-induced emission shift is attributed to energy tail states due to alloy potential inhomogeneities in the Al(x)Ga(1-x)N epilayers with large Al content.
Publisher
KOREAN PHYSICAL SOC
Issue Date
2001-12
Language
English
Article Type
Article; Proceedings Paper
Keywords

QUANTUM-WELLS; GAN; PHOTOLUMINESCENCE; SAPPHIRE; DIODES; SHIFT

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.189 - 192

ISSN
0374-4884
URI
http://hdl.handle.net/10203/84349
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 3 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0