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Characterization of Dislocations in Strain-Relaxed $Si_{1-x}Ge_x$ Buffers Grown by Molecular Beam Epitaxy

H. S. Kim; Y. T. Hwang; J. Y. Kim; H. J .Lee; I. Hwang; B. T. Lee; H. Y. Park, 응용물리, v.9, no.3, pp.362 - 367, 1996

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