Characterization of Dislocations in Strain-Relaxed $Si_{1-x}Ge_x$ Buffers Grown by Molecular Beam Epitaxy

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 348
  • Download : 0
Publisher
한국물리학회
Issue Date
1996
Language
English
Citation

응용물리, v.9, no.3, pp.362 - 367

ISSN
1013-7009
URI
http://hdl.handle.net/10203/69238
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0