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Browse "PH-Journal Papers(저널논문)" by Author Lim, H

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1	Band line-up transition in AlxGa1-xAs/In0.5Ga0.5P from capacitance-voltage analysis Kim, IJ; Cho, Yong-Hoon; Kim, KS; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.68, no.24, pp.3488 - 3490, 1996-06
2	Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures an a GaAs substrate Cho, Yong-Hoon; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.69, no.24, pp.3740 - 3742, 1996-12
3	Concentration dependent electron distributions in heavily Si-doped GaAs Lee, NY; Kim, Jae Eun; Park, Hae Yong; Kwak, DH; Lee, Hee Chul; Lim, H, SOLID STATE COMMUNICATIONS, v.99, no.8, pp.571 - 575, 1996-08
4	Defect-related luminescence of Mg-doped n-GaN grown by hydride vapour-phase epitaxy Lee, Chul; Kim, Jae Eun; Park, Hae Yong; Kim, S T; Lim, H, JOURNAL OF PHYSICS-CONDENSED MATTER, v.10, no.48, pp.11103 - 11110, 1998-12
5	Dynamics of anti-Stokes photoluminescence in type-II AlxGa1-xAs-GaInP2 heterostructures: The important role of long-lived carriers near the interface Cho, Yong-Hoon; Kim, DS; Choe, BD; Lim, H; Lee, JI; Kim, D, PHYSICAL REVIEW B, v.56, pp.R4375 - R4378, 1997
6	Essential role of impedance in the formation of acoustic band gaps Kee, CS; Kim, Jae Eun; Park, Hae Yong; Chang, Kee-Joo; Lim, H, JOURNAL OF APPLIED PHYSICS, v.87, no.4, pp.1593 - 1596, 2000-02
7	Interface states in In0.5Ga0.5P/AlxGa1-xAs heterostructures grown by liquid phase epitaxy Cho, Yong-Hoon; Choe, BD; Kim, Y; Lim, H, JOURNAL OF APPLIED PHYSICS, v.81, no.11, pp.7362 - 7366, 1997-06
8	Recombination dynamics in n-AlxGa1-xAs/n-In0.5Ga0.5P type-II heterostructures Cho, Yong-Hoon; Song, JJ; Lim, H; Choe, BD; Lee, JI; Kim, D, APPLIED PHYSICS LETTERS, v.73, no.9, pp.1245 - 1247, 1998-08
9	Tunable three-dimensional photonic crystals using semiconductors with varying free-carrier densities Ha, YK; Kim, Jae Eun; Park, Hae Yong; Kee, CS; Lim, H, PHYSICAL REVIEW B, v.66, no.7, 2002-08
10	Two-dimensional tunable metallic photonic crystals infiltrated with liquid crystals Kee, CS; Lim, H; Ha, YK; Kim, Jae Eun; Park, Hae Yong, PHYSICAL REVIEW B, v.64, no.8, pp.085114 - 085114, 2001-08

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