Results 1-10 of 168 (Search time: 0.003 seconds).
NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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Relativistic Effects in Intense Field High Harmonic Generation Jang, S. S.; Lee, Hai-Woong, Sixteenth International Conference on Atomic Physics (ICAP XVI), 1998 | |
Light deflection effects in ferroelectric domains of KNbO$_3$ Yoon, Choon Sup; Ryu, Gihan; Kim, Min-su; Yang, Yusin; Kim, Joong Hyun, , 한국물리학회, 1998 | |
Phase tannsition and cutical phememer of micell Kwon, SY; Kim, Mahn-Won, , 한국물리학회, 1998 | |
Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells Cho, Yong-Hoon; Little, BD; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, , 1998 | |
Characterization of InGaN/GaN lasing structures for high temperature device applications Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, Proceedings of Conference on Laser and Electro-Optics (CLEO)/IQEC’98, OSA Technical Digest Series, pp.223 -, 1998 | |
Study of stimulated emission in InGaN/GaN multiquantum wells in the temperature range of 175-575 K Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Krasinski, J; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, Mat. Res. Soc., 1998 | |
Optical characteristics of MOCVD-grown InGaN/GaN multiple quantum wells investigated by excitation energy dependent PL and PLE spectroscopy Cho, Yong-Hoon; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, pp.267 -, 1998 | |
Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, , 1998 | |
Room temperature laser action in laterally overgrown GaN pyramids on (111) silicon Bidnyk, S; Little, BD; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Yang, W; McPherson, SA, Mat. Res. Soc., 1998 | |
Generation of Plasma Rotation by ICRH in Tokamaks Chang, Choong-Seock, Proc. IAEA Fusion Energy Conference, 1998 |
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