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Results 1-10 of 36 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
H-related Defects Complexes in HfO2: a Model for Positive Fixed Charge Defects

Chang, Kee-Joo; Kang, J.; Lee, E.-C.; Jin, Y.-G., 7th Asian Workshop on First-Principles Electronic Structure Calculations, 2004-11

2
The electronic structure of Si impurities in HfO2

Chang, Kee-Joo; Kim, D.-Y.; Kang, J., 8th Asian Workshop on First-Principles Electronic Structure Calculations, 2005

3
Defect properties of Si impurities in HfO2: a physical origin of the threshold voltage problem in hafnium-based MOS devices

Chang, Kee-Joo; Kim, D.Y.; Kang, J., 한국물리학회 가을학술논문발표회 , pp.547 - 547, 한국물리학회, 2005-10

4
Role of defects on direct electron tunneling through ultra-thin SiO_2

Chang, Kee-Joo; Kang, J.; Bang, J.; Kim, Y.-H., The 24th International Conference on Defects in Semiconductors, 2007-05

5
Effect of H and Si impurities on device performance based on HfO 2 gate oxide

Kang, J.; Kim, D.Y.; Chang, Kee-Joo, 28th International Conference on the Physics of Semiconductors, ICPS 2006, pp.263 - 264, 2006-07-24

6
First-principles study of direct electron tunneling through ultra-thin SiO_2

Chang, Kee-Joo; Kang, J.; Kim, Y.-H., March 2007 Meeting of the American Physical Society, American Physical Society, 2007-03

7
The electronic structure of Ga-vacancy in Mn-doped GaN

Kang, J.; Chang, Kee-Joo, 34th International Symposium on Compound Semiconductors, ISCS-2007, pp.3035 - 3037, 2007-10-15

8
The electronic structure of graphene layers on SiO2 substrate

Chang, Kee-Joo; Kang, Y.-J.; Kang, J., 2008 March Meeting of the American Physical Society, American Physical Society, 2008-03

9
Atomic and electronic structure of Si impurities in HfO2

Chang, Kee-Joo; Kim, D.Y.; Kang, J., 한국물리학회 봄 학술논문발표회 , pp.78 - 78, 한국물리학회, 2005-04

10
Electronic Structure and Stability of Ferromagnetic GaN doped with Mn(AIP Conference Proceedings, 2005)

Chang, Kee-Joo; Kang, J., 27th International Conference on the Physics of Semiconductors, pp.315 - 316, 2004-07

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