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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Conference Papers(학술회의논문)

Effect of H and Si impurities on device performance based on HfO 2 gate oxide

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Kang, J. / Kim, D.Y. / Chang, Kee-Jooresearcher
Issue Date
2006-07-24
Language
ENG
Citation

28th International Conference on the Physics of Semiconductors, ICPS 2006, pp.263 - 264

URI
http://hdl.handle.net/10203/138666
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PH-Conference Papers(학술회의논문)
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