Results 21-30 of 152 (Search time: 0.006 seconds).
NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
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Occurence of local magnetic moment in all-carbon fullerenes and nanotubes Kim, YH; Choi, J; Chang, Kee-Joo; Tomanek, D, International Conference on the Science and Application of Nanotubes, 2003-07 | |
Dielectric screening and Coulomb pseudopotential mu* in MgB2 Moon, CY; Kim, YH; Chang, Kee-Joo, 한국물리학회 봄학술논문발표회 , pp.102 - 102, 한국물리학회, 2003-04 | |
Ferromagnetic fullerenes and nanotubes as molecular magnets Kim, YH; Tomanek, D; Chang, Kee-Joo, KAIST International Symposium on Frontier Issues in NBI Technologies, 2003-10-27 | |
First-principles study of the electronic structure of a PO-VZn complex in ZnO Chang, Kee-Joo; Lee, WJ; Kang, J, 한국물리학회 봄 학술논문발표회, pp.117 - 117, 한국물리학회, 2006-04 | |
Defect properties of Si impurities in HfO2: a physical origin of the threshold voltage problem in hafnium-based MOS devices Chang, Kee-Joo; Kim, D.Y.; Kang, J., 한국물리학회 가을학술논문발표회 , pp.547 - 547, 한국물리학회, 2005-10 | |
Role of defects on direct electron tunneling through ultra-thin SiO_2 Chang, Kee-Joo; Kang, J.; Bang, J.; Kim, Y.-H., The 24th International Conference on Defects in Semiconductors, 2007-05 | |
Role of hydrogen in the n-type conductivity of ZnO Chang, Kee-Joo; Bang, J., The 14th International Symposium on the Physics of Semiconductors and Applications, 2008-08 | |
Effect of H and Si impurities on device performance based on HfO 2 gate oxide Kang, J.; Kim, D.Y.; Chang, Kee-Joo, 28th International Conference on the Physics of Semiconductors, ICPS 2006, pp.263 - 264, 2006-07-24 | |
First-principles study of direct electron tunneling through ultra-thin SiO_2 Chang, Kee-Joo; Kang, J.; Kim, Y.-H., March 2007 Meeting of the American Physical Society, American Physical Society, 2007-03 | |
The electronic structure of Ge/Si core/shell nanowires Chang, Kee-Joo; Park, J.-S.; Ryu, B.; Moon, C.-Y., The 11th Nanowire Research Society Meeting and Nano Korea 2009 Satellite Session, 2009-08 |