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Results 1-8 of 8 (Search time: 0.004 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells

Cho, Yong-Hoon; Little, BD; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, , 1998

2
Characterization of InGaN/GaN lasing structures for high temperature device applications

Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, Proceedings of Conference on Laser and Electro-Optics (CLEO)/IQEC’98, OSA Technical Digest Series, pp.223 -, 1998

3
Study of stimulated emission in InGaN/GaN multiquantum wells in the temperature range of 175-575 K

Bidnyk, S; Cho, Yong-Hoon; Schmidt, TJ; Krasinski, J; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, Mat. Res. Soc., 1998

4
Optical characteristics of MOCVD-grown InGaN/GaN multiple quantum wells investigated by excitation energy dependent PL and PLE spectroscopy

Cho, Yong-Hoon; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, pp.267 -, 1998

5
Influence of Si-doping on carrier localization of MOCVD-grown InGaN/GaN multiple quantum wells

Cho, Yong-Hoon; Schmidt, TJ; Bidnyk, S; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, , 1998

6
Room temperature laser action in laterally overgrown GaN pyramids on (111) silicon

Bidnyk, S; Little, BD; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Yang, W; McPherson, SA, Mat. Res. Soc., 1998

7
Carrier dynamics of anti-Stokes photoluminescence in staggered-band lineup AlxGa1-xAs-GaInP2 heterostructures

Cho, Yong-Hoon; Little, BD; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, SPIE, pp.134 -, 1998

8
Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells

Schmidt, TJ; Bidnyk, S; Cho, Yong-Hoon; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, Mat. Res. Soc. Symp. Proc., 1998

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