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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| The effects of C and F impurities on the Schottky barrier height and effective work function at TiN/HfO2 interface Kim, Geun Myeong; Oh, Young-Jun; Chang, Kee-Joo, The 17th Asian Workshop on First-Principles Electronic Structure Calculations, KIAS, 2014-11-05 | |
| The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors HAN, WOOHYUN; Oh, Young-Jun; Chang, Kee-Joo, The 17th International Symposium Physics of semiconductors and Applications, ISPSA, 2014-12-08 | |
| Migration Pathways and Barrier for B diffusion in SiO2 and SiGe/SiO2 interfaces Chang, Kee-Joo; Oh, Young-Jun; Lee, Chang Hwi, The 17th International Symposium Physics of semiconductors and Applications, ISPSA, 2014-12-10 | |
| Hybrid functional and quasiparticle calculations of the Schottky barrier height at TiN/HfO2 interface Oh, Young-Jun; Lee, Alex Taekyung; Noh, Hyeon-Kyun; Chang, Kee-Joo, 2014 APS March Meeting, APS, 2014-03 | |
| Boron diffusion mechanism and effect of interface Ge atoms in Si/SiO2 and SiGe/SiO2 interfaces Kim, Geun Myeong; Oh, Young-Jun; 이창휘; Chang, Kee-Joo, 2014 APS March Meeting, APS, 2014-03 | |
| Role of Oxygen-Related Defects in the Instability of Amorphous In-Ga-Zn-O Thin FlimTransistor Oh, Young-Jun; HAN, WOOHYUN; Noh, Hyeon-Kyun; Chang, Kee-Joo, 32nd International Conference on the Physics of Semiconductors, ICPS, 2014-08 | |
| Migration Pathways and Barriers for B diffusion at Si/SiO2 and SiGe/SiO2 Interface Kim, Geun Myeong; Oh, Young-Jun; 이창휘; Chang, Kee-Joo, 32nd International Conference on the Physics of Semiconductors, ICPS, 2014-08 | |
| The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors HAN, WOOHYUN; Oh, Young-Jun; Chang, Kee-Joo, The 17th Asian Workshop on First-Principles Electronic Structure Calculations, KIAS, 2014-11-05 |
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- 8 2014