The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors

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Publisher
ISPSA
Issue Date
2014-12-08
Language
English
Citation

The 17th International Symposium Physics of semiconductors and Applications

URI
http://hdl.handle.net/10203/194228
Appears in Collection
PH-Conference Papers(학술회의논문)
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