The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | HAN, WOOHYUN | ko |
| dc.contributor.author | Oh, Young-Jun | ko |
| dc.contributor.author | Chang, Kee-Joo | ko |
| dc.date.accessioned | 2015-03-27T05:26:20Z | - |
| dc.date.available | 2015-03-27T05:26:20Z | - |
| dc.date.created | 2015-01-06 | - |
| dc.date.issued | 2014-12-08 | - |
| dc.identifier.citation | The 17th International Symposium Physics of semiconductors and Applications | - |
| dc.identifier.uri | http://hdl.handle.net/10203/194228 | - |
| dc.language | English | - |
| dc.publisher | ISPSA | - |
| dc.title | The electronic properties of oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The 17th International Symposium Physics of semiconductors and Applications | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Ramada Plaza Jeju, Jeju Island | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
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