Search
Results 1-5 of 5 (Search time: 0.007 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Effects of O-vacancy defects, hydrogenation, thermal annealing, and electric fields on the stability of oxide-based thin-film transistors Noh, Hyeon-Kyun; Oh, Young Jun; Chang, Kee-Joo, The 2nd International Conference on Advanced Electromaterials, ICAE, 2013-11 | |
| Electric-field-induced drift motion of charged oxygen vacancy in amorphous In-Ga-Zn-O semiconductors Oh, Young Jun; Noh, Hyeon-Kyun; Chang, Kee-Joo, The 16th International Symposium on the Physics of Semiconductors and Applications, ISPSA, 2013-07 | |
| Many-body quasiparticle and Hybrid Functional Calculations of the Schottky barrier Height at TiN/HfO2 interface Oh, Young Jun; Lee, Alex Tekyung; Noh, Hyeon-Kyun; Chang, Kee-Joo, 16th Asian Workshop on First-Principles Electronic Structure Calculations, CSRC, 2013-10 | |
| Migration Pathways and Barriers for B Diffusion at Defected Si/⍺-quartz SiO2 Interface Kim, Geun-Myeong; Oh, Young Jun; Chang, Kee-Joo, 16th Asian Workshop on First-Principles Electronic Structure Calculations, CSRC, 2013-10 | |
| Ge chemical bonding effect on B diffusion in SiGe/SiO2 interface Lee, Chang Hwi; Oh, Young Jun; Kim, Geun-Myeong; Chang, Kee-Joo, 16th Asian Workshop on First-Principles Electronic Structure Calculations, CSRC, 2013-10 |
Discover