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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| First-principles study on boron segregation at Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 한국물리학회 가을학술논문발표회, 한국물리학회, 2010-10 | |
| The electronic structure of oxygen vacancy in amorphous HfSiO_4 Noh, H.-K.; Ryu, B.; Bang, J.; Chang, Kee-Joo; Choi, E.-A., 30th International Conference on the Physics of Semiconductors, 2010-07 | |
| Segregation of B dopants in Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 6th KIAS Electronic Structure Calculation Workshop, KIAS, 2010-06 | |
| Electronic Structure and Defects in Oxide Semiconductors and Insulators Ryu, B.; Choi, E.-A.; Noh, H.-K.; Bang, J.; Lee, W.-J.; Chang, Kee-Joo, International Conference on Core Research and Engineering Science of Advanced Materials, 2010 | |
| Electronic structure and defects in high-k dielectrics and oxide semiconductors Ryu, B.; Noh, H.-K.; Bang, J.; Choi, E.-A.; Lee, W.-J.; Chang, Kee-Joo, International Union of Materials Research Societies - International Conference on Electronic Materials 2010, 2010-08 | |
| Diffusion and segregation of B dopants at Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 13th Asian Workshop on First-Principles Electronic Structure Calculations, 2010-11 | |
| Ab initio study of boron segregation and deactivation at Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, International Union of Materials Research Societies - International Conference on Electronic Materials 2010, 2010-08 |
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