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Showing results 1 to 10 of 10

1
Effect of interface Ge atoms on the segregation of B dopants in SiGe/SiO2 interface

이창휘; 오영준; 김근명; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2013-10

2
Electronic structure and diffusion of B dopants in SiGe/SiO2 interface

이창휘; 오영준; 김근명; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06

3
Migration pathway and barrier for B diffusion at the interface between Si and SiO2

김근명; 오영준; 장기주, The 8th KIAS Electronic Structure Calculation Workshop, KIAS, 2012-06

4
Migration pathway and barrier for B diffusion in defected interfaces between Si and alpha quartz SiO2

김근명; 오영준; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06

5
Schottky barrier heights and effective work functions at various TiAlN/HfO2 interface

김근명; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04

6
Searching for the diffusion pathway of boron at Si/SiO2 interface

김근명; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2012-04-25

7
The Effect of Interface Defects on the Boron Diffusion Pathway and Migration Barrier at Si/SiO2 Interface

김근명; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2013-10

8
The effect of Si impurities on the Schottky barrier height and effective work function at TiN/t-HfO2 interface

김근명; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2015-10

9
The effects of C and F impurities on the Schottky barrier height at TiN/HfO2 interface

김근명; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2014-10

10
The efffect of Al impurities on the work function at metal/HfO2 interface

김근명; 오영준; 장기주, The 11th KIAS Electronic Structure Calculation Workshop, KIAS, 2015-06-18

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