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Atomic and electronic structure of Si impurities in HfO2 Chang, Kee-Joo; Kim, D.Y.; Kang, J., 한국물리학회 봄 학술논문발표회 , pp.78 - 78, 한국물리학회, 2005-04 |
Defect properties of Si impurities in HfO2: a physical origin of the threshold voltage problem in hafnium-based MOS devices Chang, Kee-Joo; Kim, D.Y.; Kang, J., 한국물리학회 가을학술논문발표회 , pp.547 - 547, 한국물리학회, 2005-10 |
Effect of H and Si impurities on device performance based on HfO 2 gate oxide Kang, J.; Kim, D.Y.; Chang, Kee-Joo, 28th International Conference on the Physics of Semiconductors, ICPS 2006, pp.263 - 264, 2006-07-24 |
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