Browse "PH-Conference Papers(학술회의논문)" by Author 장기주

Showing results 1 to 60 of 91

1
A hybrid functional study of the chemical binding and migration of hydrogen in Mg-doped GaN

박지상; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2012-04-25

2
A new carbon allotrope with a topological nodal line in mixed sp2-sp3 bonding networks

성하준; 장기주; 김성현; 이인호, 2017 한국물리학회 봄학술논문발표회, 한국물리학회, 2017-04

3
A new phosphorus allotrope discovered by ab initio materials design

한우현; 장기주; 김성현; 이인호, 2017 가을 학술논문발표회 및 임시총회, 한국물리학회, 2017-10

4
A Shallow-Deep Transition of Donors in GaAs and AlGaAs

장기주, Solid State Physic Symposium on the Semiconducor Physics, pp.29 - 35, 1989

5
Atomic and electronic properties of monolayer MoTe2

최덕현; 성하준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04

6
Atomic and electronic structure of Mg-doped ternary nitride semiconductors

박지상; 장기주, The 8th KIAS Electronic Structure Calculation Workshop, KIAS, 2012-06

7
Atomic and electronic structure of non-stoichiometric amorphous In-Ga-Zn-O semiconductors

한우현; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2015-10

8
Bandgap opening in monolayer MoTe2 with distorted octahedral phase

최덕현; 성하준; 장기주, The 11th KIAS Electronic Structure Calculation Workshop, KIAS, 2015-06-18

9
Computational design of silicon allotropes with direct band gaps

오영준; 이인호; 이주영; 김성현; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04

10
Control of the electronic structure of graphene

장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2009-04

11
Current and future aspects of electronic structure calculations

장기주, KIAS 10th Anniversary Symposium, KIAS, 2006-07

12
Density functional calculations for the local bonding effect on the Mg acceptor level in nitride ternary alloys

박지상; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2013-04

13
Determination of the Schottky barrier height and effective work function at TiN/HfO2 interface

오영준; 노현균; 이태경; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2012-10

14
Effect of dimensionality on the conductance fluctuation behavior in hydrogenated graphene systems

최덕현; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2013-04

15
Effect of interface Ge atoms on the segregation of B dopants in SiGe/SiO2 interface

이창휘; 오영준; 김근명; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2013-10

16
Effect of oxygen-vacancy defects on the electronic structure of Ni/SiO2 and Ni/HfO2 interfaces

오영준; 노현균; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2011-10

17
Effect of spin-orbit interactions on the transport properties of graphene topological insulators

최덕현; 장기주, The 10th KIAS Electronic Structure Calculation Workshop, KIAS, 2014-06

18
Electrical transport properties of nanoscale devices

장기주, The 5th International Nanotech Symposium and Exhibition in Korea , Nano Korea, 2007-08

19
Electronic Correlations and Models for Pairing in Superconducting Oxides

장기주, 한국물리학회 학술발표회, pp.75 - 75, 한국물리학회, 1989

20
Electronic structure and diffusion of B dopants in SiGe/SiO2 interface

이창휘; 오영준; 김근명; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06

21
Electronic Structure and Localization of Disordered Graphene and Graphene Nanoribbons by Hydrogenation

장기주, Dasan conference on Graphene Science and Technology, 2010-11

22
Electronic structure calculations for oxygen vacancy in oxide semiconductors and insulators

장기주, The 5th KIAS Electronic Structure Calculation Workshop, 2009-06

23
Electronic structure of donor-pair defects in Si1-xGex alloy nanowires

박지상; 류병기; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2011-04

24
Electronic structure of monolayer and bilayer MoS2 on SiO2

성하준; 최덕현; 장기주, The 10th KIAS Electronic Structure Calculation Workshop, KIAS, 2014-06

25
Finite temperature action-derived molecular dynamics simulations for molecular transformations of C_60

김용현; 이인호; 장기주, 한국물리학회 봄학술논문발표회 , pp.59 - 59, 한국물리학회, 2002-04

26
Finite-temperature action-derived molecular dynamics in rare event simulations

이인호; 김용현; 이주영; 장기주, 한국물리학회 봄학술논문발표회, pp.100 - 100, 한국물리학회, 2002-04

27
First-principles study for segregation of B and P dopants in Si/SiO2 core-shell nanowires

김성현; 박지상; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2013-04

28
First-principles study of the electronic structure of lithium silicides

오영준; 류병기; 장기주, 한국물리학회 가을학술논문발표회, 한국물리학회, 2009-10

29
First-principles supercell calculations for accurate defect transition levels in silicon nanowires

김성현; 박지상; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2014-04

30
Formation of electrically inactive nitrogen complex in Si oxynitride

이은철; 장기주, 한국물리학회 가을학술논문발표회, pp.530 - 530, 한국물리학회, 2002-10

31
GW calculations of the charge transition levels of oxygen-vacancy in HfO_2

최은애; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2009-04

32
Hybrid functional and quasiparticle calculations of the effective work function of TiN on HfO2

오영준; 이태경; 노현균; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06

33
Hybrid functional calculations for the capture process of electrons by oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors

한우현; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2014-10

34
Hydrigen Passivation of DX Centers in $Al_xGa_{1-x}$As Alloys

장기주, 1990 Seoul International Symposium in the Physics of Semiconductors and Applications, pp.349 - 353, 1990

35
Hydrogen Bonding and Diffusion in Crystalline Semiconductors

장기주, 1991 Symposium on Theoretical Solid State Physics, 1991

36
Hydrogen in Si and GaAs

장기주, 한국물리학회 학술발표회, pp.56 - 56, 한국물리학회, 1990

37
Implementation of a Conformational Space Annealing Algorithm in Computational Search for Functional Meterials

김성현; 이인호; 이주영; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04

38
Implementation of a Conformational Space Annealing Algorithm in Computational Serach for Functional Materials

김성현; 이인호; 이주영; 오영준; 장기주, The 11th KIAS Electronic Structure Calculation Workshop, KIAS, 2015-06-18

39
Improving p-type doping efficiency by site preference in quaternary AlInGaN alloys

박지상; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06

40
Li Substitution at Alkali-site of Nax[Fe0.5Mn0.5]O2 as Cathode Material for Sodium Ion Batteries

왕지은; 김도경; 한우현; 장기주; 정영화, 2018년도 한국재료학회 추계학술대회, 한국재료학회, 2018-11-08

41
Li-assisted Na Hopping by Substitution of Li on Nax[Fe0.5Mn0.5]O2 as Cathode Material for Sodium Ion Batteries

왕지은; 정영화; 한우현; 장기주; 김도경, 2018년도 한국재료학회 춘계학술대회, 한국재료학회, 2018-05-17

42
Local bonding effect on the acceptor level of Mg in quaternary AlInGaN alloys

박지상; 김성현; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2013-10

43
Localization of electronic states in hydrogenated graphene

방준혁; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2010-04

44
Mechanism for Ferromagnetism in Diluted Magnetic Semiconductors

장기주, 고등과학원 전자구조계산 워크샵, 고등과학원, 2004-09

45
Migration pathway and barrier for B diffusion at the interface between Si and SiO2

김근명; 오영준; 장기주, The 8th KIAS Electronic Structure Calculation Workshop, KIAS, 2012-06

46
Migration pathway and barrier for B diffusion in defected interfaces between Si and alpha quartz SiO2

김근명; 오영준; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06

47
New metastable boron allotropes on the pressure-induced transition pathway from a-B to g-B

한우현; 장기주; 이인호, 13th KIAS electronic structure calculations, 고등과학원, 2017-06

48
New topological semimetallic carbon allotrope in mixed sp2-sp3 bonding networks

성하준; 장기주; 김성현; 이인호, 13th KIAS electronic structure calculations, 고등과학원, 2017-06

49
Nitrogen-hydrogen complexes in GaAs

김용성; 장기주, 한국물리학회 봄학술논문발표회, pp.227 - 227, 한국물리학회, 2002-04

50
Overview of first-principles electronic structure calculations in condensed matter physics

장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2011-04

51
Phase separation and pseudogap in mixded phase manganites

이홍석; 김용현; 장기주, 한국자기학회 2001년도 추계연구발표회, pp.26 - 27, 한국자기학회, 2001

52
Physics and Device Applications of Semiconductor Nanostructures

장기주, 제2회 한국반도체 학술대회195, KPS, 1995-01-01

53
Prediction of a new superconducting silicon allotrope and its chemical precursor

성하준; 장기주; 한우현; 이인호, 물리학회 2017년 가을학술논문발표회, 한국물리학회, 2017-10

54
Pressure-induced phase transition pathway from a-boron to g-boron

한우현; 장기주; 김성현; 이인호, 2017 한국물리학회 봄학술논문발표회, 한국물리학회, 2017-04

55
Quasiparticle energy calculations of the defect states of oxygen vacancy in HfO2

장기주; 최은애, The 5th KIAS Electronic Structure Calculation Workshop, 2009-06

56
Quasiparticle GW calculations of the effective work function at TiN/HfO2 interface

오영준; 이태경; 노현균; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2013-10

57
Role of defects in device stability based on amorphous oxide semiconductors

장기주, Oxide TFT Workshop 및 TFT Stability 토론회, 2010-11

58
Role of defects on the electronic and magnetic properties of Mn-doped GaN

장기주, 21COE Workshop in Korea, 21COE, 2007

59
Role of oxygen vacancy in n-type conductivity in InGaO_3(ZnO)_m

장기주; 이우진; 류병기, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2009-04

60
Scaling of conductance fluctuations in hydrogenated graphene nanoribbons

최덕현; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06

rss_1.0 rss_2.0 atom_1.0