1 | A hybrid functional study of the chemical binding and migration of hydrogen in Mg-doped GaN 박지상; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2012-04-25 |
2 | A new carbon allotrope with a topological nodal line in mixed sp2-sp3 bonding networks 성하준; 장기주; 김성현; 이인호, 2017 한국물리학회 봄학술논문발표회, 한국물리학회, 2017-04 |
3 | A new phosphorus allotrope discovered by ab initio materials design 한우현; 장기주; 김성현; 이인호, 2017 가을 학술논문발표회 및 임시총회, 한국물리학회, 2017-10 |
4 | A Shallow-Deep Transition of Donors in GaAs and AlGaAs 장기주, Solid State Physic Symposium on the Semiconducor Physics, pp.29 - 35, 1989 |
5 | Atomic and electronic properties of monolayer MoTe2 최덕현; 성하준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04 |
6 | Atomic and electronic structure of Mg-doped ternary nitride semiconductors 박지상; 장기주, The 8th KIAS Electronic Structure Calculation Workshop, KIAS, 2012-06 |
7 | Atomic and electronic structure of non-stoichiometric amorphous In-Ga-Zn-O semiconductors 한우현; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2015-10 |
8 | Bandgap opening in monolayer MoTe2 with distorted octahedral phase 최덕현; 성하준; 장기주, The 11th KIAS Electronic Structure Calculation Workshop, KIAS, 2015-06-18 |
9 | Computational design of silicon allotropes with direct band gaps 오영준; 이인호; 이주영; 김성현; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04 |
10 | Control of the electronic structure of graphene 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2009-04 |
11 | Current and future aspects of electronic structure calculations 장기주, KIAS 10th Anniversary Symposium, KIAS, 2006-07 |
12 | Density functional calculations for the local bonding effect on the Mg acceptor level in nitride ternary alloys 박지상; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2013-04 |
13 | Determination of the Schottky barrier height and effective work function at TiN/HfO2 interface 오영준; 노현균; 이태경; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2012-10 |
14 | Effect of dimensionality on the conductance fluctuation behavior in hydrogenated graphene systems 최덕현; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2013-04 |
15 | Effect of interface Ge atoms on the segregation of B dopants in SiGe/SiO2 interface 이창휘; 오영준; 김근명; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2013-10 |
16 | Effect of oxygen-vacancy defects on the electronic structure of Ni/SiO2 and Ni/HfO2 interfaces 오영준; 노현균; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2011-10 |
17 | Effect of spin-orbit interactions on the transport properties of graphene topological insulators 최덕현; 장기주, The 10th KIAS Electronic Structure Calculation Workshop, KIAS, 2014-06 |
18 | Electrical transport properties of nanoscale devices 장기주, The 5th International Nanotech Symposium and Exhibition in Korea , Nano Korea, 2007-08 |
19 | Electronic Correlations and Models for Pairing in Superconducting Oxides 장기주, 한국물리학회 학술발표회, pp.75 - 75, 한국물리학회, 1989 |
20 | Electronic structure and diffusion of B dopants in SiGe/SiO2 interface 이창휘; 오영준; 김근명; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06 |
21 | Electronic Structure and Localization of Disordered Graphene and Graphene Nanoribbons by Hydrogenation 장기주, Dasan conference on Graphene Science and Technology, 2010-11 |
22 | Electronic structure calculations for oxygen vacancy in oxide semiconductors and insulators 장기주, The 5th KIAS Electronic Structure Calculation Workshop, 2009-06 |
23 | Electronic structure of donor-pair defects in Si1-xGex alloy nanowires 박지상; 류병기; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2011-04 |
24 | Electronic structure of monolayer and bilayer MoS2 on SiO2 성하준; 최덕현; 장기주, The 10th KIAS Electronic Structure Calculation Workshop, KIAS, 2014-06 |
25 | Finite temperature action-derived molecular dynamics simulations for molecular transformations of C_60 김용현; 이인호; 장기주, 한국물리학회 봄학술논문발표회 , pp.59 - 59, 한국물리학회, 2002-04 |
26 | Finite-temperature action-derived molecular dynamics in rare event simulations 이인호; 김용현; 이주영; 장기주, 한국물리학회 봄학술논문발표회, pp.100 - 100, 한국물리학회, 2002-04 |
27 | First-principles study for segregation of B and P dopants in Si/SiO2 core-shell nanowires 김성현; 박지상; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2013-04 |
28 | First-principles study of the electronic structure of lithium silicides 오영준; 류병기; 장기주, 한국물리학회 가을학술논문발표회, 한국물리학회, 2009-10 |
29 | First-principles supercell calculations for accurate defect transition levels in silicon nanowires 김성현; 박지상; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2014-04 |
30 | Formation of electrically inactive nitrogen complex in Si oxynitride 이은철; 장기주, 한국물리학회 가을학술논문발표회, pp.530 - 530, 한국물리학회, 2002-10 |
31 | GW calculations of the charge transition levels of oxygen-vacancy in HfO_2 최은애; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2009-04 |
32 | Hybrid functional and quasiparticle calculations of the effective work function of TiN on HfO2 오영준; 이태경; 노현균; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06 |
33 | Hybrid functional calculations for the capture process of electrons by oxygen interstitial defects in amorphous In-Ga-Zn-O semiconductors 한우현; 오영준; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2014-10 |
34 | Hydrigen Passivation of DX Centers in $Al_xGa_{1-x}$As Alloys 장기주, 1990 Seoul International Symposium in the Physics of Semiconductors and Applications, pp.349 - 353, 1990 |
35 | Hydrogen Bonding and Diffusion in Crystalline Semiconductors 장기주, 1991 Symposium on Theoretical Solid State Physics, 1991 |
36 | Hydrogen in Si and GaAs 장기주, 한국물리학회 학술발표회, pp.56 - 56, 한국물리학회, 1990 |
37 | Implementation of a Conformational Space Annealing Algorithm in Computational Search for Functional Meterials 김성현; 이인호; 이주영; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04 |
38 | Implementation of a Conformational Space Annealing Algorithm in Computational Serach for Functional Materials 김성현; 이인호; 이주영; 오영준; 장기주, The 11th KIAS Electronic Structure Calculation Workshop, KIAS, 2015-06-18 |
39 | Improving p-type doping efficiency by site preference in quaternary AlInGaN alloys 박지상; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06 |
40 | Li Substitution at Alkali-site of Nax[Fe0.5Mn0.5]O2 as Cathode Material for Sodium Ion Batteries 왕지은; 김도경; 한우현; 장기주; 정영화, 2018년도 한국재료학회 추계학술대회, 한국재료학회, 2018-11-08 |
41 | Li-assisted Na Hopping by Substitution of Li on Nax[Fe0.5Mn0.5]O2 as Cathode Material for Sodium Ion Batteries 왕지은; 정영화; 한우현; 장기주; 김도경, 2018년도 한국재료학회 춘계학술대회, 한국재료학회, 2018-05-17 |
42 | Local bonding effect on the acceptor level of Mg in quaternary AlInGaN alloys 박지상; 김성현; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2013-10 |
43 | Localization of electronic states in hydrogenated graphene 방준혁; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2010-04 |
44 | Mechanism for Ferromagnetism in Diluted Magnetic Semiconductors 장기주, 고등과학원 전자구조계산 워크샵, 고등과학원, 2004-09 |
45 | Migration pathway and barrier for B diffusion at the interface between Si and SiO2 김근명; 오영준; 장기주, The 8th KIAS Electronic Structure Calculation Workshop, KIAS, 2012-06 |
46 | Migration pathway and barrier for B diffusion in defected interfaces between Si and alpha quartz SiO2 김근명; 오영준; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06 |
47 | New metastable boron allotropes on the pressure-induced transition pathway from a-B to g-B 한우현; 장기주; 이인호, 13th KIAS electronic structure calculations, 고등과학원, 2017-06 |
48 | New topological semimetallic carbon allotrope in mixed sp2-sp3 bonding networks 성하준; 장기주; 김성현; 이인호, 13th KIAS electronic structure calculations, 고등과학원, 2017-06 |
49 | Nitrogen-hydrogen complexes in GaAs 김용성; 장기주, 한국물리학회 봄학술논문발표회, pp.227 - 227, 한국물리학회, 2002-04 |
50 | Overview of first-principles electronic structure calculations in condensed matter physics 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2011-04 |
51 | Phase separation and pseudogap in mixded phase manganites 이홍석; 김용현; 장기주, 한국자기학회 2001년도 추계연구발표회, pp.26 - 27, 한국자기학회, 2001 |
52 | Physics and Device Applications of Semiconductor Nanostructures 장기주, 제2회 한국반도체 학술대회195, KPS, 1995-01-01 |
53 | Prediction of a new superconducting silicon allotrope and its chemical precursor 성하준; 장기주; 한우현; 이인호, 물리학회 2017년 가을학술논문발표회, 한국물리학회, 2017-10 |
54 | Pressure-induced phase transition pathway from a-boron to g-boron 한우현; 장기주; 김성현; 이인호, 2017 한국물리학회 봄학술논문발표회, 한국물리학회, 2017-04 |
55 | Quasiparticle energy calculations of the defect states of oxygen vacancy in HfO2 장기주; 최은애, The 5th KIAS Electronic Structure Calculation Workshop, 2009-06 |
56 | Quasiparticle GW calculations of the effective work function at TiN/HfO2 interface 오영준; 이태경; 노현균; 장기주, 한국물리학회 가을 학술논문발표회, 한국물리학회, 2013-10 |
57 | Role of defects in device stability based on amorphous oxide semiconductors 장기주, Oxide TFT Workshop 및 TFT Stability 토론회, 2010-11 |
58 | Role of defects on the electronic and magnetic properties of Mn-doped GaN 장기주, 21COE Workshop in Korea, 21COE, 2007 |
59 | Role of oxygen vacancy in n-type conductivity in InGaO_3(ZnO)_m 장기주; 이우진; 류병기, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2009-04 |
60 | Scaling of conductance fluctuations in hydrogenated graphene nanoribbons 최덕현; 장기주, The 9th KIAS Electronic Structure Calculation Workshop, KIAS, 2013-06 |